Properties of Typical Aluminum Nitride Substrates

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Properties of Typical Aluminum Nitride Substrates

Aluminum Nitride is becoming the material of choice for thin film, thick film and DBC applications due to its high thermal conductivity, non-toxicity, low dielectric loss and reasonable price.

Trace Element Concentration - Typical

Element Concentration
Fe 12 ppm
Cu 27 ppm
Ni 0 ppm
Zn 9 ppm
Cr 3 ppm
Na 22 ppm
K 12 ppm
Y 2.0 (wt%)
Mg 5 ppm
Ca 43 ppm
Ti 7 ppm
V 43 ppm
Zr 24 ppm
Si 152 ppm

Properties - Typical

Physical
Chemical Formula AlN (99% Theoretical Density)
Toxicity Nontoxic
Density 3.3 g/cm³
Color Tan/Gray
Crystal Structure Hexagonal
Water Absorption None
pH 6.3
Hardness (knoop) 11.8 GPa
Moh's Hardness 7 at 20°C
Melting Point >2200°C

Mechanical
Flexure Strength 290 MPa
Modulus of Elasticity 331 GPa
Poisson's Ratio 0.22

Thermal
Thermal Conductivity 175 W/mK
Coefficient of Expansion 4.6 x 10E-6 (20 - 400°C)
Maximum Use Temperature 800°C Oxidizing
Thermal Shock-Quenching 210 - 400 ? T°C (INCONSISTENT INFO.)

Electrical
Dielectric Constant 0°C 8.9 at 1MHz
Dielectric Loss 20°C 0.0001 - 0.001 at 1MHz
Resistivity >10E+14 ohm-cm
Dielectric Strength 20 KV mm
Bandgap 6.2e ohm-cm

This information does not constitute a warranty for which we shall assume legal responsibility.


Aluminum Nitride substrate related Web sites.

How Aluminum Nitride substrates are manufactured.

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Updated: 16 Jan 2009

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